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| Composite Transistors XN0431L (XN431L) Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) For switching/digital circuits 2.90+0.20 -0.05 1.90.1 (0.95) (0.95) 4 5 6 Unit: mm 0.16+0.10 -0.06 1.50+0.25 -0.05 2.8+0.2 -0.3 G 0.30+0.10 -0.05 0.50+0.10 -0.05 10 1.1+0.2 -0.1 G UNR121L(UN121L) + UNR111L(UN111L) 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) I Absolute Maximum Ratings Parameter Collector to base voltage Tr1 Collector to emitter voltage Collector current Collector to base voltage Tr2 Collector to emitter voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg (Ta=25C) Ratings 50 50 100 -50 -50 -100 300 150 -55 to +150 Unit V V mA V V mA mW C 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC-74 Mini6-G1 Package Marking Symbol: FI Internal Connection 6 5 4 Tr1 1 2 3 C Tr2 Note) The Part number in the Parenthesis shows conventional part number. 0 to 0.1 1.1+0.3 -0.1 I Basic Part Number of Element (0.65) G Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 3 2 1 0.40.2 I Features 5 1 Composite Transistors XN0431L (Ta=25C) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1/R2 fT VCB = 10V, IE = -2mA, f = 200MHz Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1k VCC = 5V, VB = 2.5V, RL = 1k -30% 0.8 4.7 1.0 150 4.9 0.2 +30% 1.2 MHz 20 0.25 V V V k min 50 50 0.1 0.5 2.0 typ max Unit V V A A mA I Electrical Characteristics G Tr1 Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency G Tr2 Parameter Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1/R2 fT VCB = -10V, IE = 2mA, f = 200MHz Conditions IC = -10A, IE = 0 IC = -2mA, IB = 0 VCB = -50V, IE = 0 VCE = -50V, IB = 0 VEB = -6V, IC = 0 VCE = -10V, IC = -5mA IC = -10mA, IB = - 0.3mA VCC = -5V, VB = - 0.5V, RL = 1k VCC = -5V, VB = -2.5V, RL = 1k -30% 0.8 4.7 1.0 150 -4.9 - 0.2 +30% 1.2 MHz 20 - 0.25 V V V k min -50 -50 - 0.1 - 0.5 -2.0 typ max Unit V V A A mA Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency 2 Composite Transistors Common characteristics chart PT -- Ta 500 XN0431L Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (C) Characteristics charts of Tr1 IC -- VCE 240 VCE(sat) -- IC 100 hFE -- IC IC/IB=10 240 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25C 200 Forward current transfer ratio hFE 200 Collector current IC (mA) 10 160 IB=1.0mA 120 0.8mA 0.6mA 80 0.4mA 160 Ta=75C 1 120 25C Ta=75C 25C 0.1 -25C -25C 80 40 0.2mA 0 0 2 4 6 8 10 12 40 0.01 1 3 10 30 100 300 1000 0 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 100 f=1MHz IE=0 Ta=25C IO -- VIN VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) 10 3 1 2 0.1 1 0 1 3 10 30 100 0.01 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Output current IO (mA) 3 Composite Transistors Characteristics charts of Tr2 IC -- VCE -240 XN0431L VCE(sat) -- IC -100 hFE -- IC IC/IB=10 240 VCE=-10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25C -200 Forward current transfer ratio hFE -30 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -1 Ta=75C 25C -25C 200 Collector current IC (mA) -160 IB=-1.0mA -0.8mA -80 -0.6mA -0.4mA -0.2mA 0 0 -2 -4 -6 -8 -10 -12 160 -120 120 Ta=75C 25C -25C 80 -40 40 -3 -10 -30 -100 -300 -1000 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 VIN -- IO f=1MHz IE=0 Ta=25C -100 VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) -10 3 -1 2 -0.1 1 0 -1 -3 -10 -30 -100 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Output current IO (mA) 4 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
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